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CdS photoconductive cell
Resin coating * dual type
Low cost dual-element sensor with standard size
CdS photoconductive cells utilize photoconductive effects in semiconductors that decrease their resistance when illuminated by light. These sensors are non-polar resistive elements with spectral response characteristics close to the human eye (luminous efficiency), thus making their operating circuits simple and small. Dual-element sensors can be used to compare the signal from each element or perform signal processing by using a separation circuit.
Features
Applications
l Thin substrate l Low price
l Sensor for various control device
s Absolute maximum ratings / Characteristics (Typ. Ta=25 C, unless otherwise noted, per 1 element)
Absolute maximum ratings
Type No.
5R type P1395-01 50 25 550 5 15 0.1 -30 to +60 7R type P2405 520 45 135 20 100 50 -30 to +60 P2478-01 530 25 75 1 *1: All characteristics are measured after exposure to light (100 to 500 lx) for one to two hours. *2: The light source is a standard tungsten lamp operated at a color temperature of 2856 K. *3: Measured 10 seconds after shutting off the 10 lx light. *4: Typical gamma characteristics (within 0.10 variations) between 100 lx to 10 lx
100 = 10 log (R100) - log (R10) log (E100) - log (E10)
Characteristics *1 Resistance *2 Peak Response time 10 lx *5 Power Ambient sensitivity Supply 100 *4 dissipation temperature Rise time Fall time Dimensional 10 wavelength 10 lx, 2856 K voltage 0 lx *3 P Ta tr tf outline p Min. Max. Min. (ms) (ms) (Vdc) (mW) (C) (nm) (k) (k) (M) 100 to 10 lx 0.60 0.90 0.70 120 50 250 20 40
E100, E10: illuminance 100 lx, 10 lx R100, R10: resistance at 100 lx and 10 lx respectively *5: The rise time is the time required for the sensor resistance to reach 63 % of the saturated conductance level (when fully illuminated). The fall time is the time required for the sensor resistance to decay from the saturated conductance level to 37 %.
CdS photoconductive cell
s Resistance vs. illuminance
1000 (Typ. Ta=25 C, light source: 2856 K) P2405
Resin coating * dual type
s Resistance vs. ambient temperature
(Typ. light source: 2856 K, 10 lx) 140
RELATIVE RESISTANCE (%)
100
P2478-01
120
P2478-01
RESISTANCE (k)
10 P1395-01
100 P2405 P1395-01 80
1
0.1 0.1
1
10
100
60 -30 -20
0
20
40
60
80
ILLUMINANCE (lx)
KCDSB0020EA
AMBIENT TEMPERATURE (C)
KCDSB0021EA
s Dimensional outlines (unit: mm) P1395-01
4.3 0.2
P2405
5.9 0.2
P2478-01
ACTIVE AREA
5.9 0.2
ACTIVE AREA
ACTIVE AREA
2.5 MAX.
5.1 0.2 3.4
2.5 MAX.
7.0 0.2 5.0
7.0 0.2
2.5 MAX. 27 2
KCDSA0006EA
5.1 2.0
25 2
0.45 LEAD
COMMON
0.5 LEAD
COMMON
27 2
0.5 LEAD
KCDSA0005EA
KCDSA0004EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2001 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KCDS1003E01 May. 2001 DN


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